dm c3028lsdx document number: ds 36210 rev. 3 - 2 1 of 9 www.diodes.com june 2013 ? diodes incorporated dm c3028lsdx advance infor mation advanced information complementary pair enhancement mode mosfet product summary device v (br)dss r ds(on) max i d max t a = + 25c q1 3 0v 2 7 m ? @ v gs = 10v 7.2 a 3 5 m ? @ v gs = 4 .5v 6.0 a q2 - 30v 25m ? @ v gs = - 10v - 7 .6a 4 1 m ? @ v gs = - 4.5 v - 6.2 a description this new generation mosfet has been designed to minimize the on - state resistance (r ds(on ) ) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. applications ? dc- dc converters ? power management f unctions ? backlighting features and benefits ? low input capacitance ? low on - resistance ? fast switching speed ? totally lead - free & fully rohs c ompliant (note s 1 & 2 ) ? halogen and antimony free. ?green? device (note 3 ) ? qualified to aec - q101 standards for high reliability mechanical data ? case: so - 8 ? case material: molded plastic, ?green? molding compound. ul flammability classification rating 94v - 0 ? moisture sensitivity: level 1 per j - std - 020 ? terminal connections: see diagram ? terminals: finish ? tin finish annealed over copper leadframe. solderable per mil - std - 202, method 208 ? weight: 0. 074 grams (approximate) ordering information (note 4 ) part number case packaging dm c3028lsdx - 13 so - 8 2 , 5 00/tape & reel note s: 1 . no purposely added le ad. fully eu directive 2002/95/ec (rohs) & 2011/65/eu (rohs 2) compliant. 2. see http://www.diodes.com/quality/lead_free.html for more information about diodes incorporated?s definitions of hal ogen - and antimony - free, "green" and lead - f ree . 3. halog en - and antimony - free "green? products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total br + cl) and <1000ppm antimony compounds. 4 . for packaging details, go to our website at http : // www.diodes.com/products/pa ckages.html . marking information t op view t op view pin configuration equivalent circuit d1 s1 g1 s2 g2 d1 d2 d2 top view logo part no . year: ?11? = 2011 1 4 8 5 3028sd x yy ww xth week: 01 ~ 53 e3
dm c3028lsdx document number: ds 36210 rev. 3 - 2 2 of 9 www.diodes.com june 2013 ? diodes incorporated dm c3028lsdx advance infor mation advanced information maximum ratings ? q1 and q2 ( @t a = + 25c , unless otherwise specified.) thermal characteristics ( @t a = +25c, unless otherwise specified.) characteristic symbol value units total power dissipation (note 5 ) t a = + 25 c p d 1.2 w t a = + 70 c 0.75 thermal resistance, junction to ambient (note 5 ) s teady state r ja 108 c/w t<10s 65 total power dissipation (not e 6 ) t a = + 25 c p d 1.5 w t a = + 70 c 0.95 thermal resistance, junction to ambient (note 6 ) s teady state r ja 85 c/w t<10s 50 thermal resistance, junction to case (note 6 ) r j c 14.5 operating and storage temperature range t j, t stg - 55 to +150 c electrical characteristics ? q1 ( @t a = +25c, unless otherwise specified.) characteristic symbol min typ max unit test condition off characteristics (note 8 ) drain - source breakdown voltage bv dss 30 ? ? v v gs = 0v, i d = 250 a zero gate voltage dra in current i dss ? ? 1 a v ds = 24v , v gs = 0v gate - source leakage i gss ? ? 1 00 n a v gs = 20 v, v ds = 0v on characteristics (note 8 ) gate threshold voltage v gs(th) 1 ? 3 v v ds = v gs , i d = 250 a static drain - source on - resistance r ds (on) ? 19 27 m ? v gs = 10 v, i d = 6 a ? 2 2 35 v gs = 4 .5v, i d = 5 a diode forward voltage v sd ? 0.7 1. 2 v v gs = 0v, i s = 1 .3 a dynamic characteristics (note 9 ) input capacitance c iss ? 641 ? pf v ds = 15v , v gs = 0v f = 1.0mhz output capacitance c oss ? 66 ? reverse transfe r capacitance c rss ? 5 1 ? gate resistance r g ? 2.2 ? ? v ds = 0 v, v gs = 0v , f = 1.0mhz total gate charge ( v gs = 4.5 v ) q g ? 6 ? n c v ds = 15v , i d = 10a total gate charge ( v gs = 10v ) q g ? 13.2 ? gate - source charge q gs ? 1.7 ? gate - drain charge q gd ? 2.2 ? turn - on delay time t d(on) ? 3.3 ? n s v gs = 10 v, v dd = 15v , r g = 6 ? , i d = 1 a turn - on rise time t r ? 4.4 ? turn - off delay time t d(off) ? 22.3 ? turn - off fall time t f ? 5.3 ? notes: 5 . device mounted on fr - 4 substrate pc board, 2 oz copper, with minimum recommended pad layout. 6 . device mounted on fr - 4 substrate pc board, 2oz copper, with 1inch square copper plate. 7 . i ar and e ar rating are based on low frequency and duty cycles to keep t j = + 25c 8 . short duration pulse test used to minimize self - heating effect. 9 . guaranteed by design. not subject to product testing. characteristic symbol q1 q2 units drain - source voltage v dss 30 - 30 v gate - source voltage v gss 20 20 v continuous drain current ( note 5 ) v gs = 10 v steady state t a = + 25 c t a = + 70 c i d 5.5 4.1 - 5 .8 - 4. 3 a t<10s t a = + 25 c t a = + 70 c i d 7.2 5.7 - 7.6 - 6.1 a maximum body diode forward current (note 5 ) i s 2.2 - 2.2 a pulsed drain current (10 s pulse, duty cycle = 1%) i dm 40 - 30 a
dm c3028lsdx document number: ds 36210 rev. 3 - 2 3 of 9 www.diodes.com june 2013 ? diodes incorporated dm c3028lsdx advance infor mation advanced information electrical characteristics ? q 2 ( @t a = +25c, unless otherwise specified.) characteristic symbol min typ max unit test condition off characteristics (not e 8 ) drain - source breakdown voltage bv dss - 30 ? ? v v gs = 0v, i d = - 250 a zero gate voltage drain current i dss ? ? - 1 a v ds = - 24 v, v gs = 0v gate - source leakage i gss ? ? 1 00 n a v gs = 20 v, v ds = 0v on characteristics (note 8 ) gate threshold voltage v gs(th) - 1 ? - 3 v v ds = v gs , i d = - 250 a static drain - source on - resistance r ds (on) ? 2 1 25 m ? v gs = - 10 v, i d = - 6 a ? 2 9 4 1 v gs = - 4 .5v, i d = - 5 a diode forward voltage v sd ? - 0.7 - 1. 2 v v gs = 0v, i s = - 1 .3 a dynamic characteristics (note 9 ) input capacitance c iss ? 1241 ? pf v ds = - 15 v, v gs = 0v f = 1.0mhz output capacitance c oss ? 146 ? reverse transfer capacitance c rss ? 1 10 ? gate resistance r g ? 14. 8 ? ? v ds = 0 v, v gs = 0v , f = 1.0mhz total gate charge ( v gs = - 4.5 v ) q g ? 10.9 ? n c v ds = - 15v , i d = - 7 a total gate charge ( v gs = - 10v ) q g ? 22 ? gate - source charge q gs ? 3.5 ? gate - drain charge q gd ? 4.7 ? turn - on delay time t d(on) ? 9.7 ? n s v gs = - 10 v, v dd = - 15v , r g en = 6 ? , i d = - 7 a turn - on rise time t r ? 17.1 ? turn - off delay time t d(off) ? 60.5 ? turn - off fall time t f ? 40.4 ? notes: 8 . short duration pulse test used to minimize self - heating effect. 9 . guaranteed by design. not subject to product testing.
dm c3028lsdx document number: ds 36210 rev. 3 - 2 4 of 9 www.diodes.com june 2013 ? diodes incorporated dm c3028lsdx advance infor mation advanced information n - channe l ? q1 0.0 5.0 10.0 15.0 20.0 25.0 30.0 0 0.5 1 1.5 2 v , drain-source voltage (v) ds figure 1 typical output characteristic i , d r ai n c u r r en t (a) d v = 2.5v gs v = 3.0v gs v = 3.5v gs v = 4.0v gs v = 4.5v gs v = 5.0v gs v = 10v gs 0 5 10 15 20 25 30 0 0.5 1 1.5 2 2.5 3 3.5 4 v , gate-source voltage (v) gs figure 2 typical transfer characteristic i , d r ai n c u r r en t (a ) d v = 150c gs v = 125c gs v = 85c gs v = 25c gs v = -55c gs v = 5v ds 0.05 0 5 10 15 20 25 30 i , drain-source current (a) figure 3 typical on-resistance vs. drain current and gate voltage d r , d r ai n -so u r c e o n -r esi st an c e ( ) d s ( o n ) ? 0.045 0.04 0.035 0.015 0.01 0.005 0.00 0.03 0.025 0.02 v = 4.5v gs v = 10v gs 0 0.005 0.01 0.015 0.02 0.025 0.03 0.035 0.04 0.045 0.05 0 5 10 15 20 25 30 i , drain current(a) d figure 4 typical on-resistance vs. drain current and temperature r , d r ai n -so u r c e o n -r es i st an c e ( ) d s ( o n ) ? t = 150c a v = 4.5v gs t = 125c a t = 85c a t = 25c a t = -55c a 0.6 0.8 1 1.2 1.4 1.6 1.8 -50 -25 0 25 50 75 100 125 150 t , ambient temperature (c) a figure 5 on-resistance variation with temperature r , d r a i n -so u r c e o n -r es i st an c e (n o r m a l i z ed ) d s ( o n ) v = 4.5v i = 5a gs d v = 10v i = 10a gs d r , d r ai n -s o u r c e o n -r e si st a n c e ( ) d s ( o n ) ? 0 0.005 0.01 0.015 0.02 0.025 0.03 0.035 0.04 -50 -25 0 25 50 75 100 125 150 t , ambient temperature (c) a figure 6 on-resistance variation with temperature v = 4.5v i = 5a gs d v = 10v i = 10a gs d
dm c3028lsdx document number: ds 36210 rev. 3 - 2 5 of 9 www.diodes.com june 2013 ? diodes incorporated dm c3028lsdx advance infor mation advanced information 0 0.5 1 1.5 2 2.5 3 -50 -25 0 25 50 75 100 125 150 v , g a t e t h r esh o l d vo l t a g e g s ( t h ) t , ambient temperature (c) a figure 7 gate threshold variation vs. ambient temperature i = 250a d i = 1ma d 0 5 10 15 20 25 30 0 0.2 0.4 0.6 0.8 1 1.2 v , source-drain voltage (v) sd figure 8 diode forward voltage vs. current i , so u r c e c u r r en t (a ) s t = 25c a 0.1 1 10 100 1000 10000 0 10 20 30 v , drain-source voltage (v) ds figure 9 typical drain-source leakage current vs. voltage i , d r ai n l ea kag e c u r r en t (n a) d s s t = 125c a t = 150c a t = 85c a t = 25c a 10000 0 2 4 6 8 10 12 14 16 18 20 v , drain-source voltage (v) ds figure 10 typical junction capacitance c , j u n c t i o n c ap ac i t a n c e (p f ) t f = 1mhz 1000 100 10 c iss c oss c rss q , total gate charge (nc) figure 11 gate-source voltage vs. total gate charge g 0 2 4 6 8 10 0 2 4 6 8 10 12 14 v , g a t e-s o u r c e vo l t a g e (v) g s v =15 i = 10a ds d
dm c3028lsdx document number: ds 36210 rev. 3 - 2 6 of 9 www.diodes.com june 2013 ? diodes incorporated dm c3028lsdx advance infor mation advanced information p - channel ? q2 0 1 2 3 4 5 10 15 20 - i , d r ai n c u r r en t (a ) d 0 5 -v , drain -source voltage (v) figure 1 typical output characteristics ds v = -3.0v gs v = -3.5v gs v = -4.0v gs v = -4.5v gs v = -10v gs v = -5.0v gs v = -2.5v gs 10 15 20 0 1 2 3 4 5 0 5 -v , gate-source voltage (v) gs figure 2 typical transfer characteristics -i , d r ai n c u r r en t ( a) d t = 150 c a t = 125 c a t = 85 c a t = 25 c a t = -55 c a v = -5.0v ds 0.01 0.02 0.03 0.04 0.05 0 0 5 10 15 20 25 30 -i , drain source current (a) figure 3 typical on-resistance vs. drain current and gate voltage d r , d r ai n - so u r c e o n -r esi st an c e ( ) d s ( o n ) ? v = -4.5v gs v = -10v gs 0.05 0.15 0.25 0 5 10 15 20 0 0.10 0.20 0.30 -v , gate-source voltage (v) gs figure 4 typical drain-source on-resistance vs. gate-source voltage r , d r a i n -so u r c e o n -r es i st an c e ( ) d s ( o n ) ? i = -7.0a d i = -6.2a d 0.01 0.02 0.03 0.04 0.05 0 2 4 6 8 10 12 14 16 18 20 0 -i , drain source current (a) figure 5 typical on-resistance vs. drain current and temperature d r , d r ai n -so u r c e o n -r esi st an c e ( ) d s ( o n ) ? t = -55 c a t = 25 c a t = 85 c a t = 125 c a t = 150 c a v = -4.5v gs 0.6 0.8 1.2 1.4 1.6 1.8 1.0 -50 -25 0 25 50 75 100 125 150 t , junction temperature ( c) j figure 6 on-resistance variation with temperature r , d r ai n -so u r c e o n -r e si st an c e (n o r m al i z e d ) d s ( o n ) v = -5.0v i = -5.0a gs d v = -10v i = -10a gs d
dm c3028lsdx document number: ds 36210 rev. 3 - 2 7 of 9 www.diodes.com june 2013 ? diodes incorporated dm c3028lsdx advance infor mation advanced information 0.01 0.02 0.03 0.04 0.05 0 -50 -25 0 25 50 75 100 125 150 t , junction temperature ( c) j figure 7 on-resistance variation with temperature r , d r a i n -so u r c e o n -r es i st an c e ( ) d s ( o n ) ? v = -10v i= a gs d -10 v = 5.0v i= a gs d - -5.0 -50 -25 0 25 50 75 100 125 150 t , ambient temperature (c) figure 8 gate threshold variation vs. ambient temperature a 0.5 1.0 1.5 2.0 2.5 3.0 v , g a t e t h r es h o l d v o l t ag e (v ) g s ( t h ) 0 -i = 1ma d -i = 250a d 0 0.2 0.4 0.6 0.8 1.0 1.2 10 15 20 -i , so u r c e c u r r e n t (a) s 0 5 -v , source-drain voltage (v) figure 9 diode forward voltage vs. current sd t = 25 c a t = -55 c a t = 85 c a t = 125 c a t = 150 c a
dm c3028lsdx document number: ds 36210 rev. 3 - 2 8 of 9 www.diodes.com june 2013 ? diodes incorporated dm c3028lsdx advance infor mation advanced information package outline dimensions please see ap02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version. suggested pad layout please see ap02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. so - 8 dim m in max a - 1.75 a1 0.10 0.20 a2 1.30 1.50 a3 0.15 0.25 b 0.3 0.5 d 4.85 4.95 e 5.90 6.10 e1 3.85 3.95 e 1.27 typ h - 0.35 l 0.62 0.82 0 8 all dimensions in mm dimensions value (in mm) x 0.60 y 1.55 c1 5.4 c2 1.27 gauge plane seating plane detail ?a? detail ?a? e e1 h l d e b a2 a1 a 45 7 ~ 9 a3 0 . 2 5 4 x c1 c2 y
dm c3028lsdx document number: ds 36210 rev. 3 - 2 9 of 9 www.diodes.com june 2013 ? diodes incorporated dm c3028lsdx advance infor mation advanced information important notice diodes incorporated makes no warranty of any kind, express or implied, with regards to this document, including, but not limited to, the implied warranties of merchantability and fitness for a particular purpose (and their equivale nts under the laws of any jurisdiction). diodes incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. diodes incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does diodes incorporated convey any license unde r its patent or trademark rights, nor the rights of others. any customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold diodes incorporated and all the companies whose products are represented on diod es incorporated website, harml ess against all damages. diodes incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthor ized sales channel. should customers purchase or use diodes incorporated products for any unintended or unauthorized application, customers shall indemnify and hold diodes incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising ou t of, directly or indirectly, any claim of personal injury or death associ ated with such unintended or unauthorized application. products described herein may be covered by one or more united states, international or foreign patents pending. product nam es and markings noted herein may also be covered by one or more united stat es, international or foreign trademarks. this document is written in english but may be translated into multiple languages for reference. only the english version of this document is the final and determinative format released by diodes incorporated. li fe support diodes incorporated products are specifically not authorized for use as critical components in life support devices or system s without the express written approval of the chief executive officer of diodes incorporated. as used herein: a. lif e support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided i n the labeling can be reasonably expected to result in significant injury to the user. b. a critical component is any component in a life support device or system whose failure to perform can be reasonably expe cted to cause the failure of the life support device or to affect its safety or effectiveness. customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support d evices or systems, and acknowledge and agree that they are solely responsible for all le gal, regulatory and safety - related requirements concerning their products and any use of diodes incorporated products in such safety - critical, life support devices or systems, notwithstanding any devices - or systems - related information or support that may be provided by diodes incorporated. further, customers must fully indemnify diodes incorporated and its representatives against any damages arising out of the use of diodes incorporated products in such safety - critical, life support devices or systems. c opyright ? 2013, diodes incorporated www.diodes.com
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